Download Analysis and Simulation of Semiconductor Devices by Siegfried Selberherr PDF

By Siegfried Selberherr

The invention of semiconductor units is a reasonably fresh one, contemplating classical time scales in human existence. The bipolar transistor used to be introduced in 1947, and the MOS transistor, in a essentially usable demeanour, used to be proven in 1960. From those beginnings the semiconductor equipment box has grown speedily. the 1st built-in circuits, which contained quite a few units, grew to become commercially to be had within the early Sixties. instantly thereafter an evolution has taken position in order that at the present time, lower than 25 years later, the manufacture of built-in circuits with over 400.000 units according to unmarried chip is feasible. Coincident with the expansion in semiconductor machine improvement, the literature referring to semiconductor gadget and expertise matters has actually exploded. within the final decade approximately 50.000 papers were released on those topics. the appearance of so known as Very-Large-Scale-Integration (VLSI) has definitely published the necessity for a greater realizing of uncomplicated gadget habit. The miniaturization of the only transistor, that is the key prerequisite for VLSI, approximately resulted in a breakdown of the classical versions of semiconductor devices.

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56] Lanyon, H. P. , Tuft, R. : Bandgap Narrowing in Moderately to Heavily Doped Silicon. IEEE Trans. 7, 1014-1018 (1979). 57] Lee, D. , Fossum, J. : Energy Band Distortion in Highly Doped Silicon. IEEE Trans. 6, 626-634 (1983). 58] Lue, J. : Theory of Schottky Barrier Heights of Amorphous MIS Solar Cells. Solid-State Electron. 9, 869-874 (1982). 59] Lundstrom, M. , Schwartz, R. , Gray, J. : Transport Equations for the Analysis of Heavily Doped Semiconductor Devices. Solid-State Electron. 24,195-202 (1981).

88] has published a generalized current equation for the simulation of submicron devices by supplementing the drift and diffusion current components with so-called gradient, rate and relaxation current components in order to include the most important features of velocity overshoot. aE In=q· n· ( v (E) + W(E) . ax +B(E). aE) an an at -q. D(E). ax -q. A(E). 3-72) Graphs of the gradient coefficient W(E), the rate coefficient B(E) and the relaxation coefficient A (E) have been presented by Thornber for electrons in silicon at room temperature.

A Self-Consistent Calculation of Effective Intrinsic Concentration in Heavily Doped Silicon. Int. J. Electronics 38, No. I, 127 -135 (1975). 40] Heasell, E. : On the Role of Degeneracy in the "Heavy Doping" Phenomenon. Solid-State Electron. 23, 183 (1980). : Ballistic Electron Transport in Semiconductors. IEEE Trans. Electron Devices ED-28, 937 -940 (1981). , Potzl, H. : Bandstruktur und Stromtransport. Berlin-Heidelberg-New York: Springer 1976. : Untersuchungen des Transportverhaltens von III-V Halbleitern bei hohen elektrischen Feldern mit Monte-Carlo-Methoden.

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