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By Wilfred N. Caron

Antenna Impedance Matching is definitely written and coupled to its audience. using graphs is great. The charts are worthwhile. The reader can discover ways to fit an antenna utilizing this booklet. courses from the ARRL are consistently a cut price.

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I I Semiconductor Metal n-type semiconductor Fig. 10. Energy-band diagram for a Schottky barrier metal contact t o a n n-type semiconductor, based on the energy parameters of the materials without including interface effects. A typical energy band diagram for a Schottky barrier on an n-type ma~ q4s, and upon conterial is given in Fig. 10. In the case shown, q 4 > tact electrons flow from the n-type semiconductor t o the metal, causing a depletion layer in the n-type semiconductor and an internal electric field next to the junction, which is able to collect photoexcited carriers and enable them to contribute to electric current in a n external circuit.

1)-(6). Local boron diffusion. (7)(12). Surface texturing. (13)-(24). n++ diffusion with phosphorus from POC13, followed by n+ diffusion with phosphorus. (25) SiOz passivation of front and back surfaces, the front passivation layer aIso acting as an antireflection coating. (26)-(30). Open the oxide at rear side at the points with the local boron BSF, evaporate A1 on the whole rear side. (30)-(35). Open the windows on the front side for the metal grid, evaporate Ti, Pd, and Ag, lift off the excess metal in acetone, and electroplate silver on the front surface.

7 into its components as a function of the concentration value. (Reprinted with permission from R. A. ) of the cells becomes increasingly important as the concentration increases, and passes through a maximum with increasing concentration. At the highest concentration levels, bulk Auger recombination dominates. 48 Photovoltaic Materials Some caution needs to be exercised in recognizing the differences between differential (measured from a small periodic light to produce the measurement signal superimposed on a constant bias light to define the injection level) and actual surface recombination velocities (Brendel, 1995; Brendel and Wolf, 1995).

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